IXYS Introduces a 20A RF Driver IC for Power MOSFETs

SANTA CLARA, Calif.--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS) announced today that its IXYSRF team and wholly owned subsidiary, Directed Energy, Inc., has introduced a new 20A RF MOSFET driver IC for high frequency switching and short power pulses applications. This driver IC solves the problems of delay, lead inductance and false triggering due to noise and feedback, which are typical with high current, high speed gate drivers and applications. The DEIC421 incorporates Kelvin connections to the driver input and ground pins directly to the IC chip, allowing the use of a common mode choke to prevent unwanted turn-on or turn-off of the driver from ground bounce. The result is very clean operation without oscillations or varying threshold of turn-on or turn-off.

The DEIC421 gate driver is manufactured using IXYS’ proprietary CMOS technology, with design innovation that improves switching efficiency and reduces noise, while ensuring the highest degree of ruggedness.

The DEIC421 expands IXYS driver IC offerings and is in the same low inductance package as the proven DEIC420 but with an additional input lead for the Kelvin ground connection. The experience gained by the IXYS Colorado team, in producing leading edge power pulse generators and subsystems led to the development of the DEIC421.

For data sheets and technical assistance, contact IXYSRF at (970) 493-1901 or email to info@ixysrf.com.

About IXYS Corporation

Since its inception in 1983, IXYS Corporation has been developing technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications.

IXYS, and its subsidiary companies, offer a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, flexible displays and RF power. For more information, visit www.ixys.com.