Freescale Broadens General-Purpose RF Amplifier Portfolio with Four New Devices

Amplifiers Offer High Levels of Performance and Active Biasing Technology for a Wide Range of Applications

AUSTIN, Texas--(BUSINESS WIRE)--Freescale Semiconductor today unveiled four general-purpose broadband RF amplifiers that deliver high gain and linearity over bandwidths from DC up to 6 GHz. The amplifiers are well suited for applications ranging from WiMAX base stations to meter readers, set-top boxes, RFID readers and any application requiring a cost-effective, small-signal gain source.

The next generation indium gallium phosphide (InGaP) devices are Freescale’s first to feature active biasing technology. Active biasing reduces performance variation due to temperature and supply voltage variations and provides ease-of-use for system designers.

Freescale entered the general-purpose amplifier (GPA) market in 2004 with a family of gallium arsenide (GaAs) devices designed to provide high levels of performance and reliability, along with dynamic supply capability and unparalleled deliverability for a wide array of applications. The company’s portfolio of general-purpose amplifiers now comprises 17 distinct devices and includes heterojunction field effect transistors (HFETs) for greater ruggedness and higher linearity for the general-purpose market.

“The addition of these devices strengthens our portfolio and allows designers to meet a greater variety of system and market requirements,” said Gavin Woods, vice president and general manager, RF Division, Freescale Semiconductor. “Customers using these amplifiers will benefit from Freescale’s worldwide technical support and our ability to deliver large volumes consistently.”

The four new devices are:

MMH3111N:
- GaAs HFET
- 250 MHz to 3 GHz
- 21.5 dBm P1dB output power and 11.5 dB gain at 2140 MHz

MMG3014N:
- InGaP HBT
- DC to 4 GHz
- 24 dBm P1dB output power and 20 dB gain at 900 MHz

MMG3015N:
- InGaP HBT
- DC to 6 GHz
- 21 dBm P1dB output power and 15.5 dB dBm gain at 900 MHz.

MMG3016N:
- InGaP HFET
- DC to 4 GHz
- 24 P1dB dBm output power and 15 dB of gain at 900 MHz

The third-order output intercept points (IP3) for the devices range from 37 dBm to 41 dBm, providing the performance required for applications demanding low intermodulation distortion and wide dynamic range. All four are RoHS compliant and housed in cost-effective plastic SOT-89 packages with a Moisture Sensitivity Level (MSL) rating of 1 at a 260°C peak package temperature.

The devices feature inherently low thermal resistance and low junction temperatures for higher reliability and longer operating life. They operate directly from a single 5V bias supply, eliminating the need for external resistors.

Availability

Samples of the MMG3014N and MMG3016N are expected in March 2007 with production planned for May 2007. Samples of the MMH3111N are planned for February 2007 and production is scheduled for June 2007. Freescale expects to be in volume production on the MMG3015N in February 2007.

About Freescale Semiconductor

Freescale Semiconductor, Inc. is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. The privately held company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with sales of $6.2 billion (USD) for the most recently reported four quarters. www.freescale.com

Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007