Innovative Silicon Inc. to Host Customer Meetings at DAC; ISi to Showcase Its Ultra-Dense One Transistor, Zero Capacitor Z-RAM Embedded Memory With Improved Performance and Lower Costs Compared to Traditional Memory Technologies

SANTA CLARA, Calif.--(BUSINESS WIRE)--July 12, 2006--Innovative Silicon Inc. (ISi), the developer of Z-RAM(R) high density memory IP, today announced that it is accepting meetings during DAC with SoC and microprocessor designers interested in reducing costs and improving the performance of their embedded memory implementations.

Innovative Silicon Inc. (ISi) helps IC manufacturers reduce the cost of their complex ICs by 10 to 40 percent or more. Its Z-RAM technology is one-fifth the size of embedded SRAM, the most widely used standard on-chip memory technology today, and requires no exotic materials, no extra mask steps and no new physics. In fact, the company claims that there is no other step manufacturers can take that will deliver such dramatic cost savings with so little risk. In comparison, current embedded DRAM technologies require a capacitor that is extremely difficult to shrink, requiring exotic designs and very expensive process modifications, which makes it very complex to scale to finer geometry process nodes.

"Our Z-RAM technology was validated in January of this year when we announced silicon results and that AMD had secured a full technology license to use our ultra-dense memory IP in its future microprocessor products," said Jeff Lewis, vice president of marketing at ISi. "And we'd like to extend an invitation for designers to engage with us at DAC to discuss their latest designs and how we can help them meet their performance and cost requirements."

Designers of memory-intensive applications using SOI or 90 nm and finer geometries are encouraged to meet with ISi at DAC in San Francisco, July 24-27, booth 1913 in the South Hall of the Moscone Center. For more information or to request a meeting to discuss how Z-RAM can improve your bottom line, please register at http://www.innovativesilicon.com/.

About Innovative Silicon

Incorporated in 2002, Innovative Silicon Inc. was founded to develop and commercialize Floating Body effect memory for SoC/MPU products used in diverse applications including microprocessors, handheld computers, games consoles, cellular communications devices, and cameras. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004 and its first 65nm designs in 2005. The company is incorporated in the USA with R&D in Lausanne, Switzerland. For more information see http://www.z-ram.com.

Z-RAM is a registered trademark of Innovative Silicon Inc. All other trademarks and registered trademarks are the property of their respective owners